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    <title>氮化镓晶体管 on 办公AI智能小助手</title>
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      <title>负电容突破GaN晶体管性能极限</title>
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      <description>&lt;h3 id=&#34;负电容突破gan晶体管性能极限&#34;&gt;负电容突破GaN晶体管性能极限&lt;/h3&gt;&#xA;&lt;p&gt;加州科学家发现，集成具有负电容特性的电子材料可帮助高功率氮化镓晶体管突破性能屏障。发表于《科学》的研究表明，负电容效应能够规避晶体管在&amp;quot;开启&amp;quot;状态与&amp;quot;关断&amp;quot;状态性能之间通常存在的物理极限权衡。&lt;/p&gt;</description>
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